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Ordering number : ENA1601
MCH6001
SANYO Semiconductors
DATA SHEET
MCH6001
Features
* * * *
NPN Epitaxial Planar Silicon Composite Transistor
High Frequency Low-Noise Amplifier
Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=16dB typ (f=1GHz). Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg Conditions Ratings 15 8 2 150 When mounted on glass epoxy substrate 1unit When mounted on glass epoxy substrate 400 600 150 -55 to +150 Unit V V V mA mW mW C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=5V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA 60 13 16 Conditions Ratings min typ max 1.0 1.0 150 GHz Unit A A
Marking : GT Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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N1809AB TK IM TC-00002075 No. A1601-1/4
MCH6001
Continued from preceding page.
Parameter Forward Transfer Gain Noise Figure Symbol |S21e| NF
2
Conditions VCE=5V, IC=50mA, f=1GHz VCE=1V, IC=10mA, f=1GHz
Ratings min typ 16 1.2 1.8 max
Unit dB dB
Package Dimensions
unit : mm (typ) 7022A-019
Marking
6 5 4
0.25
2.0 6 5 4
0.15
GT
0 t o 0.02
2.1 1.6
1
2
3
1 : Base1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Collector1
Top view
0.25
1 0.65
2
3 0.3
0.85
1
2
3
1 : Base1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Collector1 SANYO : MCPH6
0.07
6
5
4
Electrical Connection
C1 E2 B2
B1
E1
C2
(Top view)
140 120
IC -- VCE
1.5mA
150
IC -- VBE
Collector Current, IC -- mA
80 60 40
90
0.6mA
60
0.3mA
30
20 0
IB=0mA
0 2 4 6 8 IT13901
0
0
0.2
0.4
0.6
0.8
5V
1.0
0.9mA
VCE=1V
100
1.2mA
Collector Current, IC -- mA
120
1.2 IT13902
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
No. A1601-2/4
MCH6001
2
hFE -- IC
Reverse Transfer Capacitance, Cre -- pF
1.0
Cre -- VCB
f=1MHz
7
DC Current Gain, hFE
100
VCE=5V
1V
7
5
5
3
3
2 1.0
2
3
5
7
10
2
3
5
7 100
2
3
2 0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- mA
3
Cob -- VCB
IT13903 20
Collector-to-Base Voltage, VCB -- V |S21e|2 -- I
7 10 IT13904
C
f=1MHz Output Capacitance, Cob -- pF
2
Forward Transfer Gain, |S21e|2 -- dB
15
1.0
10
7
5
5
3 0.1
2
3
5
7
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
100 7
10 IT13905
7
0 1.0
2
3
5
7
10
2
3
5
fT -- IC
Collector Current, IC -- mA
4
7 100 2 IT15151
NF -- IC
f=1GHz
Gain-Bandwidth Product, fT -- GHz
5
2
Noise Figure, NF -- dB
3
3
10 7 5 3 2 1.0 1.0
2
VC E=1V
1
5V
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
700
PT, PC -- Ta
7 100 2 IT15152
0 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7 100 IT13908
When mounted on glass epoxy substrate Collector Dissipation, PT, PC -- mW
600 500 400 300 200 100 0
al di ss ip P ati C1 un on it
P TT ot
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
IT15153
No. A1601-3/4
MCH6001
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This catalog provides information as of November, 2009. Specifications and information herein are subject to change without notice.
PS No. A1601-4/4

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